+852 5918 3214 | sales@tongxinwei.com | Mon-Fri 9:00-18:00
NTMFD001N03P9

NTMFD001N03P9

onsemi Package: Cut Tape (CT)

Description: MOSFET 2N-CH 30V 11A 8PQFN

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Configuration 2 N-Channel (Dual) Asymmetrical
Mounting Type Surface Mount
Qualification -
Package / Case 8-PowerWDFN
Vgs(th) (Max) @ Id 3V @ 1mA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Supplier Device Package 8-PQFN (5x6)
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V, 43nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds 1224pF @ 15V, 6575pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Product added to Bulk Inquiry

Already Added

This product is already in your Bulk Inquiry list.