GCMX080A120B2H1P
SemiQ
Package: Tray
Description: MOSFET 4N-CH 1200V 27A
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Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 119W (Tc) |
| Configuration | 4 N-Channel (Full Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 1362pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
