Description: IC
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| Grade | - |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 1.3W (Tj) |
| Configuration | N and P-Channel |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5A, 10V, 110mOhm @ 3A, 10V |
| Supplier Device Package | 8-SOP |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V, 20nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170pF @ 50V, 1050pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 3A (Ta) |