IMSQ120R040M2HHXUMA1
Infineon Technologies
Package: Cut Tape (CT)
Description: SIC DISCRETE
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Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 290W (Tc) |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Surface Mount |
| Qualification | - |
| Vgs(th) (Max) @ Id | 5.1V @ 5.5mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 18A, 18V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
