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DI005N06SQ2

DI005N06SQ2

Description: MOSFET 2N-CH 60V 5A 8SO

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 1.3W (Ta)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Qualification -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id 3V @ 250μA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 40mOhm @ 4.5A, 10V
Supplier Device Package 8-SO
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
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