GCMX010A120B2B1P
SemiQ
Package: Tray
Description: MOSFET 2N-CH 1200V 214A
Need More Information?
For additional product parameters, user manuals, or technical support, please contact our sales team.
Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 750W (Tc) |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4V @ 40mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 100A, 20V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 476nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 13100pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 214A (Tc) |
