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HP8KE5TB1

HP8KE5TB1

ROHM Semiconductor Package: Cut Tape (CT)

Description: 100V 8.5A, DUAL NCH+NCH, HSOP8,

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 3W (Ta), 20W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Qualification -
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 193mOhm @ 3A, 10V
Supplier Device Package 8-HSOP
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3A (Ta), 8.5A (Tc)
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