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G220P03D32

G220P03D32

Goford Semiconductor Package: Cut Tape (CT)

Description: MOSFET 2P-CH 30V 12A 8DFN

Product Specifications
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 30W (Tc)
Configuration 2 P-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 2V @ 250μA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 22mOhm @ 3A, 10V
Supplier Device Package 8-DFN (3.15x3.05) Dual
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds 1305pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
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