Description: SIC MODULE, 650 A, 1700 V, 62 MM
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| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 2.78kW (Tc) |
| Configuration | 2 N-Channel, Common Source (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 3.6V @ 305mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.86mOhm @ 650A, 15V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 2988nC @ 15V |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 97300pF @ 1.2kV |
| Current - Continuous Drain (Id) @ 25°C | 916A (Tc) |