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G120N02D32

G120N02D32

Goford Semiconductor Package: Cut Tape (CT)

Description: MOSFET N+N-CH 20V 26A 15W 11M(MA

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 15W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Qualification -
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 1.2V @ 250μA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 4.5V
Supplier Device Package 8-DFN (3x3)
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 10V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
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