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DI016N06PQ2-AQ

DI016N06PQ2-AQ

Description: MOSFET 2N-CH 60V 16A 8TDSON

Product Specifications
Grade Automotive
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Part Status Active
Power - Max 16.7W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Qualification AEC-Q101
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 2.5V @ 250μA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 33mOhm @ 15A, 10V
Supplier Device Package TDSON-8-4
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 30V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
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