VS-4C10ET07S2LHM3
Vishay General Semiconductor - Diodes Division
Package: Cut Tape (CT)
Description: RECTIFIER, SILICON CARBIDE, 650V
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Product Specifications
| Grade | Automotive |
|---|---|
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Capacitance @ Vr, F | 440pF @ 1V, 1MHz |
| Supplier Device Package | TO-263AB (D2PAK) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 80 μA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
