UHB50SC12E1BC3N
onsemi
Package: Cut Tape (CT)
Description: MOSFET 2P-CH 1200V 69A MODULE
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Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 208W (Tc) |
| Configuration | 2 P-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 6V @ 20mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 12V |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 2930pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tj) |
