TSM60NC196CF C0G
Taiwan Semiconductor Corporation
Package: Tube
Description: 600V, 12A, SINGLE N-CHANNEL HIGH
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Product Specifications
| Grade | - |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 196mOhm @ 4A, 10V |
| Power Dissipation (Max) | 74W (Tc) |
| Supplier Device Package | ITO-220S |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1506 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
