TK080A60Z1,S4X
Toshiba Semiconductor and Storage
Package: Tube
Description: N-CH MOSFET, 600 V, 0.08 @10V, T
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Product Specifications
| Grade | - |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ Id | 4V @ 1.17mA |
| Operating Temperature | 150°C |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 10.3A, 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Supplier Device Package | TO-220SIS |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2510 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
