Description: 650 V, 20A HIGH SURGE SILICON CA
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| Grade | - |
|---|---|
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-247-2 |
| Capacitance @ Vr, F | 1260pF @ 0V, 1MHz |
| Supplier Device Package | DO-247 LL |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 μA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 20A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 20 A |