Description: DUAL N-CHANNEL MOSFET,SOT-563
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| Grade | - |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 350mW (Tj) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 200mA, 10V |
| Supplier Device Package | SOT-563 |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 50V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 34pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |