+852 5918 3214 | sales@tongxinwei.com | Mon-Fri 9:00-18:00
SI3134KU6-TP

SI3134KU6-TP

Description: MOSFET 2N-CH 20V 0.75A 6DFN

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 420mW (Tj)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Qualification -
Package / Case 6-XFDFN Exposed Pad
Vgs(th) (Max) @ Id 1.2V @ 250μA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 250mOhm @ 500mA, 4.5V
Supplier Device Package DFN1010B-6
Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 16V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta)
Product added to Bulk Inquiry

Already Added

This product is already in your Bulk Inquiry list.