S3M0016120D
SMC Diode Solutions
Package: Tube
Description: MOSFETS SILICON CARBIDES 1200V 1
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Product Specifications
| Grade | - |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | +18V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-247-3 |
| Vgs(th) (Max) @ Id | 4V @ 30mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 75A, 18V |
| Power Dissipation (Max) | 732W (Tc) |
| Supplier Device Package | TO-247AD |
| Gate Charge (Qg) (Max) @ Vgs | 287 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5251 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
