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RJ1G10BBGTL1

RJ1G10BBGTL1

ROHM Semiconductor Package: Cut Tape (CT)

Description: NCH 40V 280A, TO-263AB, POWER MO

Product Specifications
Grade -
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Qualification -
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.43mOhm @ 90A, 10V
Power Dissipation (Max) 192W (Tc)
Supplier Device Package TO-263AB
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 105A (Tc)
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