QH8KE6TCR
ROHM Semiconductor
Package: Cut Tape (CT)
Description: MOSFET 2N-CH 100V 4A TSMT8
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Product Specifications
| Grade | - |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 1.1W (Ta) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 8-SMD, Flat Leads |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 4A, 10V |
| Supplier Device Package | TSMT8 |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
