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PSMN1R3-80SSFJ

PSMN1R3-80SSFJ

Nexperia USA Inc. Package: Cut Tape (CT)

Description: NEXTPOWER 80 V, 1.2 MOHM, 335 AM

Product Specifications
Grade -
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Qualification -
Package / Case SOT-1235
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.2mOhm @ 25A, 10V
Power Dissipation (Max) 341W (Tc)
Supplier Device Package LFPAK88 (SOT1235)
Gate Charge (Qg) (Max) @ Vgs 246 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 16647 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 335A (Tc)
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