NXV08A170DB2
onsemi
Package: Tray
Description: MOSFET 2N-CH 80V 200A APM12-CBA
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Product Specifications
| Grade | Automotive |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | - |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Through Hole |
| Qualification | AEC-Q100 |
| Package / Case | 12-PowerDIP Module (1.118", 28.40mm) |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Operating Temperature | 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V |
| Supplier Device Package | APM12-CBA |
| Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V |
| Drain to Source Voltage (Vdss) | 80V |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
