NXH003P120M3F2PTNG
onsemi
Package: Tray
Description: MOSFET 2N-CH 1200V 435A 36PIM
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Product Specifications
| Technology | Silicon Carbide (SiC) |
|---|---|
| FET Feature | - |
| Part Status | Active |
| Power - Max | 1.48kW (Tj) |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4.4V @ 160mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 200A, 18V |
| Supplier Device Package | 36-PIM (56.7x62.8) |
| Gate Charge (Qg) (Max) @ Vgs | 1200nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 20889pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 435A (Tj) |
