NVXK2VR80WXT2
onsemi
Package: Tube
Description: MOSFET 6N-CH 1200V 31A APM32
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Product Specifications
| Grade | Automotive |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 208W (Tc) |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Mounting Type | Through Hole |
| Qualification | AEC-Q101 |
| Package / Case | 32-PowerDIP Module (1.449", 36.80mm) |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 116mOhm @ 20A, 20V |
| Supplier Device Package | APM32 |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 1154pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
