+852 5918 3214 | sales@tongxinwei.com | Mon-Fri 9:00-18:00
NVXK2VR40WXT2

NVXK2VR40WXT2

onsemi Package: Tube

Description: MOSFET 6N-CH 1200V 55A APM32

Product Specifications
Grade Automotive
Technology Silicon Carbide (SiC)
FET Feature -
Part Status Active
Power - Max 319W (Tc)
Configuration 6 N-Channel (3-Phase Bridge)
Mounting Type Through Hole
Qualification AEC-Q101
Package / Case 32-PowerDIP Module (1.449", 36.80mm)
Vgs(th) (Max) @ Id 4.3V @ 10mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 59mOhm @ 35A, 20V
Supplier Device Package APM32
Gate Charge (Qg) (Max) @ Vgs 106nC @ 20V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 1789pF @ 800V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Product added to Bulk Inquiry

Already Added

This product is already in your Bulk Inquiry list.