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NVVR26A120M1WSS

NVVR26A120M1WSS

onsemi Package: Tube

Description: MOSFET 2N-CH 1200V AHPM15-CDI

Product Specifications
Grade Automotive
Technology Silicon Carbide (SiC)
FET Feature -
Part Status Active
Power - Max 1kW (Tj)
Configuration 2 N-Channel (Half Bridge)
Mounting Type Through Hole
Qualification AEC-Q101
Package / Case 15-PowerDIP Module (2.441", 62.00mm)
Vgs(th) (Max) @ Id 3.2V @ 150mA
Operating Temperature -40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.6mOhm @ 400A, 20V
Supplier Device Package AHPM15-CDI
Gate Charge (Qg) (Max) @ Vgs 1.75μC @ 20V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 31700pF @ 800V
Current - Continuous Drain (Id) @ 25°C 400A (Tj)
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