Description: MOSFET 2N-CH 1200V AHPM15-CDE
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| Grade | Automotive |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 1kW (Tj) |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Through Hole |
| Qualification | AEC-Q101 |
| Package / Case | 15-PowerDIP Module (2.441", 62.00mm) |
| Vgs(th) (Max) @ Id | 3.2V @ 150mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 400A, 20V |
| Supplier Device Package | AHPM15-CDE |
| Gate Charge (Qg) (Max) @ Vgs | 1.75μC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 31700pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tj) |