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NVMJD010N10MCLTWG

NVMJD010N10MCLTWG

onsemi Package: Cut Tape (CT)

Description: MOSFET 2N-CH 100V 11.8A 8LFPAK

Product Specifications
Grade Automotive
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 3.1W (Ta), 84W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Qualification AEC-Q101
Package / Case SOT-1205, 8-LFPAK56
Vgs(th) (Max) @ Id 3V @ 97μA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 10mOhm @ 17A, 10V
Supplier Device Package 8-LFPAK
Gate Charge (Qg) (Max) @ Vgs 26.4nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 1795pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11.8A (Ta), 62A (Tc)
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