NH3T008MP120F2
NoMIS Power
Package: Tray
Description: 1200 V, 8 m SiC Half-Bridge Powe
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Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4V @ 100mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 530nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
