MT3S113TU,LF
Toshiba Semiconductor and Storage
Package: Cut Tape (CT)
Description: RF TRANS NPN 5.3V 11.2GHZ UFM
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Product Specifications
| Gain | 12.5dB |
|---|---|
| Part Status | Active |
| Power - Max | 900mW |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Leads |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Frequency - Transition | 11.2GHz |
| Supplier Device Package | UFM |
| Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 5.3V |
