IXSJ25N120R1
IXYS
Package: Tube
Description: 1200V 62M (25A @ 25C) SIC MOSFET
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Product Specifications
| Grade | - |
|---|---|
| FET Type | N-Channel |
| Vgs (Max) | +21V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Part Status | Active |
| Mounting Type | Through Hole |
| Qualification | - |
| Package / Case | TO-247-3 |
| Vgs(th) (Max) @ Id | 4.8V @ 5.3mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
| Power Dissipation (Max) | 75.3W (Tc) |
| Supplier Device Package | ISO247-3L |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1435 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
