IV1D12030T2
Inventchip
Package: Tube
Description: DIODE SIL CARB 1200V 30A TO247-2
Need More Information?
For additional product parameters, user manuals, or technical support, please contact our sales team.
Product Specifications
| Speed | No Recovery Time > 500mA (Io) |
|---|---|
| Technology | SiC (Silicon Carbide) Schottky |
| Part Status | Active |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Capacitance @ Vr, F | 1640pF @ 1V, 1MHz |
| Supplier Device Package | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 μA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 80.6A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
