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IPM018N10NM5LF2AUMA1

IPM018N10NM5LF2AUMA1

Infineon Technologies Package: Cut Tape (CT)

Description: IPM018N10NM5LF2AUMA1

Product Specifications
Grade -
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Qualification -
Package / Case 4-PowerSFN
Vgs(th) (Max) @ Id 3.45V @ 240μA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 15V
Power Dissipation (Max) 3.8W (Ta), 349W (Tc)
Supplier Device Package PG-HSOG-4-1
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 14000 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 285A (Tc)
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