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HT8MC5TB1

HT8MC5TB1

ROHM Semiconductor Package: Cut Tape (CT)

Description: 60V 10A/11.5A, DUAL NCH+PCH, HSM

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Power - Max 2W (Ta), 13W (Tc)
Configuration N and P-Channel
Mounting Type Surface Mount
Qualification -
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 90mOhm @ 3.5A, 10V, 97mOhm @ 4A, 10V
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V, 17.1nC @ 10V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 30V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 10A (Tc), 4A (Ta), 11.5A (Tc)
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