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HN3C10FUTE85LF

HN3C10FUTE85LF

Toshiba Semiconductor and Storage Package: Tape & Reel (TR)

Description: RF TRANS 2 NPN 12V 7GHZ US6

Product Specifications
Gain 11.5dB
Part Status Obsolete
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Type 2 NPN (Dual)
Operating Temperature -
Frequency - Transition 7GHz
Supplier Device Package US6
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Current - Collector (Ic) (Max) 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
Voltage - Collector Emitter Breakdown (Max) 12V
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