Description: MOSFET 2N-CH 1200V 175A
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| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | - |
| Configuration | 2 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | - |
| Operating Temperature | - |
| Rds On (Max) @ Id, Vgs | - |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Current - Continuous Drain (Id) @ 25°C | 175A |