GCMX005A120B3B1P
SemiQ
Package: Tray
Description: MOSFET 4N-CH 1200V 383A
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Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 1.154kW (Tc) |
| Configuration | 4 N-Channel (Half Bridge) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4V @ 80mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 200A, 20V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 927nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 23500pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 383A (Tc) |
