G1K1P10TE
Goford Semiconductor
Package: Tube
Description: MOSFET P-CH 100V 24A 88W TO-220
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Product Specifications
| FET Type | P-Channel |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 15A, 10V |
| Power Dissipation (Max) | 88W (Tc) |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
