G18NP06Y
Goford Semiconductor
Package: Cut Tape (CT)
Description: MOSFET N/P-CH 60V 18A TO252-4
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Product Specifications
| Grade | - |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 45W (Tc), 50W (Tc) |
| Configuration | N and P-Channel, Common Drain |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | TO-252-5, DPAK (4 Leads + Tab) |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA, 3.5V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V |
| Supplier Device Package | TO-252-4 |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V, 25nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 30V, 2610pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
