G120P06T
Goford Semiconductor
Package: Tube
Description: MOSFET P-CH 60V -120A 277W TO-22
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Product Specifications
| FET Type | P-Channel |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 277W (Tc) |
| Supplier Device Package | 8-SOP |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12674 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
