FS01MR08A8MA2LBCHPSA1
Infineon Technologies
Package: Box
Description: MOSFET 6N-CH 750V 620A
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Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | - |
| Configuration | 6 N-Channel |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4.55V @ 200mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.69mOhm @ 620A, 18V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 1480nC @ 18V |
| Drain to Source Voltage (Vdss) | 750V |
| Input Capacitance (Ciss) (Max) @ Vds | 43000pF @ 470V |
| Current - Continuous Drain (Id) @ 25°C | 620A (Tj) |
