DSC12A065LP-13
Diodes Incorporated
Package: Cut Tape (CT)
Description: SiC SBD 650V~1000V T-DFN8080-4
Need More Information?
For additional product parameters, user manuals, or technical support, please contact our sales team.
Product Specifications
| Grade | - |
|---|---|
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Part Status | Active |
| Mounting Type | Surface Mount |
| Qualification | - |
| Package / Case | 4-PowerTSFN |
| Capacitance @ Vr, F | 516pF @ 100mV, 1MHz |
| Supplier Device Package | DFN8080 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 20 μA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
