Description: MOSFET 2N-CH 30V 1.1A TSOT26
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| Grade | Automotive |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | 500mW (Ta) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ Id | 950mV @ 250μA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 200mA, 4.5V |
| Supplier Device Package | TSOT-26 |
| Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 40.8pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |