+852 5918 3214 | sales@tongxinwei.com | Mon-Fri 9:00-18:00
DI035N06PQ2

DI035N06PQ2

Description: MOSFET 2N-CH 60V 35A 8TDSON

Product Specifications
Grade -
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Part Status Active
Power - Max 35.7W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Qualification -
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 2.5V @ 250μA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 15mOhm @ 12A, 10V
Supplier Device Package TDSON-8-4
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 10V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 782pF @ 30V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Product added to Bulk Inquiry

Already Added

This product is already in your Bulk Inquiry list.