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CMS120N080B

CMS120N080B

Bruckewell Package: Bulk

Description: SIC N-MOSFET,1200V,35A,TO-263-7L

Product Specifications
Grade -
FET Type N-Channel
Vgs (Max) +20V, -5V
Technology SiCFET (Silicon Carbide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Qualification -
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Vgs(th) (Max) @ Id 4V @ 10mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 90mOhm @ 10A, 20V
Power Dissipation (Max) 188W (Tc)
Supplier Device Package TO-263-7
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
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