+852 5918 3214 | sales@tongxinwei.com | Mon-Fri 9:00-18:00
CBB011M12GM4T

CBB011M12GM4T

Wolfspeed, Inc. Package: Box

Description: SIC, MODULE, 11M, 1200V, 48 MM,

Product Specifications
Grade -
Technology Silicon Carbide (SiC)
FET Feature -
Part Status Active
Power - Max 292W (Tj)
Configuration 4 N-Channel (Full Bridge)
Mounting Type Chassis Mount
Qualification -
Package / Case Module
Vgs(th) (Max) @ Id 4V @ 28mA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 14.9mOhm @ 100A, 15V
Supplier Device Package -
Gate Charge (Qg) (Max) @ Vgs 405nC @ 15V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 10.1pF @ 800V
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Product added to Bulk Inquiry

Already Added

This product is already in your Bulk Inquiry list.