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BSP170IATMA1

BSP170IATMA1

Infineon Technologies Package: Cut Tape (CT)

Description: BSP170IATMA1

Product Specifications
Grade -
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Qualification -
Package / Case TO-261-3
Vgs(th) (Max) @ Id 4V @ 270μA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 260mOhm @ 1.9A, 10V
Power Dissipation (Max) 1.8W (Ta), 5W (Tc)
Supplier Device Package PG-SOT223-4-U01
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 1.88A (Ta), 3.2A (Tc)
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