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ADP280120W3

ADP280120W3

STMicroelectronics Package: Tray

Description: MOSFET 6N-CH 1200V 275A ACEPACK

Product Specifications
Grade -
Technology Silicon Carbide (SiC)
FET Feature -
Part Status Active
Power - Max 549W
Configuration 6 N-Channel
Mounting Type Chassis Mount
Qualification -
Package / Case Module
Vgs(th) (Max) @ Id 4.4V @ 30mA
Operating Temperature -40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 5.05mOhm @ 280A, 18V
Supplier Device Package ACEPACK
Gate Charge (Qg) (Max) @ Vgs 629nC @ 18V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 18710pF @ 800V
Current - Continuous Drain (Id) @ 25°C 275A (Tj)
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