A2U8M12W3-FC
STMicroelectronics
Package: Bulk
Description: MOSFET 4N-CH 750V/1.2KV 180A
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Product Specifications
| Grade | - |
|---|---|
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Part Status | Active |
| Power - Max | - |
| Configuration | 4 N-Channel (Three Level Inverter) |
| Mounting Type | Chassis Mount |
| Qualification | - |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | 4.2V @ 2mA, 4V @ 2mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 288nC @ 18V, 304nC @ 18V |
| Drain to Source Voltage (Vdss) | 750V, 1.2kV |
| Input Capacitance (Ciss) (Max) @ Vds | 7660pF @ 400V, 7370pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 180A, 140A |
